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Data Sheet
ADP2323
where:
Δ V OUT_RIPPLE is the allowable output voltage ripple.
R ESR is the equivalent series resistance of the output capacitor.
Table 10. R ecommende d MOSFETs
Vendor Part No. V DS I D
Fairchild FDS8880 30 V 10.7 A
R DSON
12 m?
Qg
12 nC
I C OUT _ rms =
Select the largest output capacitance given by C OUT_UV , C OUT_OV ,
and C OUT_RIPPLE to meet both load transient and output ripple
performance.
The selected output capacitor voltage rating must be greater
than the output voltage. The minimum rms current rating of
the output capacitor is determined by the following equation:
? I L
12
LOW-SIDE POWER DEVICE SELECTION
The ADP2323 has integrated low-side MOSFET drivers, which
Fairchild FDMS7578 25 V 14 A 8 m? 8 nC
Fairchild FDS6898A 20 V 9.4 A 14 m? 16 nC
Vishay Si4804CDY 30 V 7.9 A 27 m? 7 nC
Vishay SiA430DJ 20 V 10.8 A 18.5 m? 5.3 nC
AOS AON7402 30 V 39 A 15 m? 7.1 nC
AOS AO4884L 40 V 10 A 16 m? 13.6 nC
PROGRAMMING UVLO INPUT
The precision enable input can be used to program the UVLO
PVINx
can drive the low-side N-channel MOSFETs (NFETs). The
selection of the low-side N-channel MOSFET affects the dc-to-
R TOP_EN
ENx
EN CMP
dc regulator performance.
The selected MOSFET must meet the following requirements:
R BOT_EN
1μA
4μA
1.2V
R TOP _ EN =
R BOT _ EN =
? 1 +
?
2 × π × f z ? ?
V OUT ( s )
?
G vd ( s ) = = A VI × R ×
s
? 1 +
?
2 × π × f p ? ?
?
? Drain source voltage (V DS ) must be higher than 1.2 × V IN .
? Drain current (I D ) must be greater than the 1.2 × I LIMIT_MAX ,
where I LIMIT_MAX is the selected maximum current-limit
threshold.
The ADP2323 low-side gate drive voltage is 5 V. Make sure that
the selected MOSFET can be fully turned on at 5 V.
Total gate charge (Qg at 5 V) must be less than 30 nC. Lower Qg
characteristics constitute higher efficiency.
When the high-side MOSFET is turned off, the low-side
MOSFET carries the inductor current. For low duty cycle
applications, the low-side MOSFET carries the current for most
of the period. To achieve higher efficiency, it is important to
select a low on-resistance MOSFET. The power conduction loss
for the low-side MOSFET can be calculated using the following
equation:
P FET_LOW = I OUT 2 × R DSON × (1 ? D )
where R DSON is the on resistance of the low-side MOSFET.
Make sure that the MOSFET can handle the thermal dissipation
due to the power loss.
In some cases, efficiency is not critical for the system; therefore,
the diode can be selected as the low-side power device. The
average current of the diode can be calculated using the
following equation:
Figure 46. Programming UVLO Input
Use the following equation to calculate R TOP_EN and R BOT_EN :
1 . 1 V × V IN _ RISING ? 1 . 2 V × V IN _ FALLING
1 . 1 V × 5 μA ? 1 . 2 V × 1 μA
1 . 2 V × R TOP _ EN
V IN _ RISING ? R TOP _ EN × 5 μ Α ? 1 . 2 V
where:
V IN_RISING is the V IN rising threshold.
V IN_FALLING is the V IN falling threshold.
COMPENSATION COMPONENTS DESIGN
For peak current-mode control, the power stage can be
simplified as a voltage controlled current source supplying
current to the output capacitor and load resistor. It is composed of
one domain pole and a zero contributed by the output capacitor
ESR. The control-to-output transfer function is shown in the
following equations:
? s ?
?
V COMP ( s ) ? ?
?
I DIODE (AVG) = (1 ? D ) × I OUT
The reverse breakdown voltage rating of the diode must be
greater than the input voltage with an appropriate margin to
allow for ringing, which may be present at the SWx node. A
Schottky diode is recommended because it has low forward
f z =
f p =
1
2 × π × R ESR × C OUT
1
2 × π × ( R + R ESR ) × C OUT
voltage drop and fast switching speed.
If a diode is used for the low-side device, the ADP2323 must
enable the PFM mode by connecting the MODE pin to ground.
where:
A VI = 5 A/V
R is the load resistance.
C OUT is the output capacitance.
Rev. A | Page 21 of 32
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